RIR Power Electronics and Silicon University Secure Two Research Paper Selections at IEEE MWSCAS 2026

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RIR Power Electronics Limited, in collaboration with Silicon University, Odisha, announced that two joint research papers have been accepted for presentation at the IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026 in Cincinnati, USA. The selected papers focus on Silicon Carbide (SiC) semiconductor technology and high-voltage power electronics, reinforcing the company’s research capabilities and industry-academia collaboration.

PRICE-SENSITIVE TRIGGER

Event: Research Recognition / Industry-Academia Collaboration

Type: Business Update

Impact: Positive

Immediate Effect: The international recognition strengthens RIR Power Electronics’ technology credentials in Silicon Carbide (SiC) semiconductor research and enhances its positioning in next-generation power electronics.

Key Metrics:

  • Research Papers Accepted: 2
  • Conference: IEEE MWSCAS 2026
  • Location: Cincinnati, Ohio, USA
  • Technology Focus:
    • Silicon Carbide (SiC) MOSFETs
    • High-voltage Power Electronics
    • Thermal Management
    • Electric Mobility

Highlight:

  • The acceptance of two research papers at a prestigious IEEE conference enhances the company’s technological credibility but has no immediate disclosed financial impact.
What Happened ?

RIR Power Electronics Limited announced that two joint research papers developed with Silicon University, Odishahave been accepted for presentation at the IEEE Midwest Symposium on Circuits and Systems (MWSCAS) 2026.

The research focuses on advanced Silicon Carbide (SiC) semiconductor devices designed to improve efficiency, reliability, switching performance, and thermal management in electric mobility and high-voltage industrial applications.

The achievement builds on the Memorandum of Understanding (MoU) signed between RIR Power Electronics and Silicon University in November 2025 to jointly develop next-generation semiconductor technologies.

Key Details

Research Highlights:

  • Two joint research papers have been selected for presentation at IEEE MWSCAS 2026.
  • Research collaboration is between RIR Power Electronics and Silicon University, Odisha.
  • The first paper compares:
    • Silicon Carbide (SiC) MOSFET traction inverter topology
    • Conventional Silicon IGBT traction inverter topology
    • Based on a 33 kW PMSM drive model
    • Demonstrates superior electrical and thermal performance of 3.3 kV SiC MOSFET technology.
  • The second paper focuses on:
    • 4H-SiC Implant Epitaxy MOSFET design
    • High-voltage applications from 3.3 kV onwards
    • Device optimization using Silvaco TCAD simulation tools.
  • The collaboration supports research in:
    • Electric mobility
    • Renewable energy
    • Industrial automation
    • High-voltage power electronics
    • Wide-bandgap semiconductor technologies.

Note:

  • The announcement is focused on research achievements and does not disclose any commercial contracts, product launches, revenue impact, or intellectual property monetization.
Risk Analysis

Summary:

  • The development enhances R&D visibility but does not have an immediate measurable financial impact.

Key Risks:

  • No direct revenue or order inflow announced.
  • Commercialization of research outcomes remains uncertain.
  • Semiconductor technology development requires sustained investment and long development cycles.
  • Future business benefits depend on successful product development and market adoption.

Worst Case:

  • If the research does not translate into commercially viable products or customer adoption, the achievement may remain primarily academic with limited impact on earnings.

Risk Level: Low

Company Commentary
  • Dr. Jaideep Talukdar, Vice Chancellor, Silicon University, stated that the acceptance of two joint research papers reflects the strength of industry-academia collaboration in accelerating innovation in wide-bandgap power semiconductors and practical power electronics systems.
  • Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd., said the achievement demonstrates the success of the partnership with Silicon University and supports India’s semiconductor ambitions by advancing indigenous Silicon Carbide technologies and globally competitive power semiconductor solutions.

Official Exchange Filing: RIR Power Electronics Limited

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